(Opto Diode: Camarillo, CA) -- Opto Diode Corp., an ITW company, has introduced the AXUV100G, a 100 mm x 100 mm active-area electron detection device specially designed for use in radiation detection applications.

The electron photodetector features electron responsivity at energy levels as low as 100eV. The shunt resistance is at 20 Mohms, minimum; reverse breakdown voltage is 5V (minimum) and 10V (typical). The high-performance AXUV100G’s capacitance is 5 nanofarads (nF), typical. Rise time is at a maximum of 10 µsec.

Ambient storage and operating temperatures range from -10°C to 40°C. Nitrogen or vacuum storage and operating temperatures range from -20°C to 80°C. The lead soldering temperature for the UV device is 260°C.

To download the data sheet and view typical electron detection response, EUV-UV photon response, and typical UV-VIS-NIR photon responsivity charts, see https://optodiode.com/pdf/AXUV100GDS.pdf. For additional information on the high-performance AXUV electron detector series, visit https://optodiode.com/photodiodes-axuv-detetors.html.

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